DocumentCode :
2695148
Title :
High Performance GaAs C-Band and Ku-Band MMIC Oscillators
Author :
Moghe, S. ; Holden, T.
Volume :
2
fYear :
1987
fDate :
May 9 1975-June 11 1987
Firstpage :
911
Lastpage :
914
Abstract :
A number of monolithic single-ended and push-pull oscillator chips were developed for C-band and Ku-band applications. The chips were used to build dielectric resonator oscillator (DROs) and voltage controlled oscillators (VCOs) in both frequency bands. These MMICs also have integrated a buffer amplifier at the oscillator output to provide better load isolation and power output stability. The oscillators demonstrated performance similar to conventional hybrid circuitry however, the MMIC circuits will provide circuit simplicity with improved reliability, decreased size and reduced manufacturing cost.
Keywords :
Circuit stability; Costs; Dielectrics; Frequency; Gallium arsenide; Integrated circuit reliability; MMICs; Manufacturing; Power amplifiers; Voltage-controlled oscillators;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave Symposium Digest, 1987 IEEE MTT-S International
Conference_Location :
Palo Alto, CA, USA
ISSN :
0149-645X
Type :
conf
DOI :
10.1109/MWSYM.1987.1132566
Filename :
1132566
Link To Document :
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