• DocumentCode
    2695194
  • Title

    Multi-Watt Power Generation at Millimeter-Wave Frequencies Using Epitaxially-Stacked Varactor Diodes

  • Author

    Staecker, P.W. ; Hines, M.E. ; Occhiuti, F. ; Cushman, J.F.

  • Volume
    2
  • fYear
    1987
  • fDate
    May 9 1975-June 11 1987
  • Firstpage
    917
  • Lastpage
    920
  • Abstract
    High power varactor diodes capable of generating watts of power at frequencies as high as 100 GHz are described. These devices show cutoff frequencies in excess of 900 GHz and breakdown voltages greater than 100V. Output powers (and associated efficiencies) of frequency doublers built with these devices are 9W at 22 GHz (60%), 5.5W at 35 GHz (60%), 5W at 44 GHz (50%) and 280 mW at 88 GHz (14%). The last result is nearly 10 dB better than any previously reported multiplier power in that frequency range, but is preliminary in the sense that it is new data with an as yet non-optimal circuit. Thermal response simulations reported here show low operating junction temperatures for these devices.
  • Keywords
    Circuits; Fabrication; Frequency; Gallium arsenide; Intersymbol interference; Power generation; Power generation economics; Semiconductor diodes; Temperature; Varactors;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave Symposium Digest, 1987 IEEE MTT-S International
  • Conference_Location
    Palo Alto, CA, USA
  • ISSN
    0149-645X
  • Type

    conf

  • DOI
    10.1109/MWSYM.1987.1132568
  • Filename
    1132568