Applying the Two-Port Lumped-Network FDTD Method to Modeling Linear Field-Effect Transistors with Nonzero Transconductance Delay Parameter

Author

González, Oscar ; Pereda, José A. ; Herrera, Amparo ; Grande, Ana ; Vegas, Angel

Author_Institution

Dpto. Ingenieria de Comunicaciones, Cantabria Univ., Santander

fYear

2006

fDate

9-14 July 2006

Firstpage

1989

Lastpage

1992

Abstract

The two-port lumped-network FDTD (TP-LN-FDTD) method has been applied to modeling field effect transistors (FETs) with nonzero transconductance delay parameter. To this end, the exponential factor associated with phase delay in the current generator is approximated by a rational function. The validity of this approach has been demonstrated by computing the scattering parameters of a microwave heterojunction FET (HJ-FET) amplifier

Keywords

JFET circuits; electric admittance; finite difference time-domain analysis; lumped parameter networks; microwave amplifiers; exponential factor; finite difference time domain method; heterojunction FET; linear field-effect transistors; microwave HJ-FET amplifier; nonzero transconductance delay parameter; phase delay; rational function; scattering parameters; two-port lumped-network FDTD method; Admittance; Delay; Equivalent circuits; FETs; Finite difference methods; Frequency; Maxwell equations; Time domain analysis; Transconductance; Transmission line matrix methods;

fLanguage

English

Publisher

ieee

Conference_Titel

Antennas and Propagation Society International Symposium 2006, IEEE

Conference_Location

Albuquerque, NM

Print_ISBN

1-4244-0123-2

Type

conf

DOI

10.1109/APS.2006.1710967

Filename

1710967