Title :
Applying the Two-Port Lumped-Network FDTD Method to Modeling Linear Field-Effect Transistors with Nonzero Transconductance Delay Parameter
Author :
González, Oscar ; Pereda, José A. ; Herrera, Amparo ; Grande, Ana ; Vegas, Angel
Author_Institution :
Dpto. Ingenieria de Comunicaciones, Cantabria Univ., Santander
Abstract :
The two-port lumped-network FDTD (TP-LN-FDTD) method has been applied to modeling field effect transistors (FETs) with nonzero transconductance delay parameter. To this end, the exponential factor associated with phase delay in the current generator is approximated by a rational function. The validity of this approach has been demonstrated by computing the scattering parameters of a microwave heterojunction FET (HJ-FET) amplifier
Keywords :
JFET circuits; electric admittance; finite difference time-domain analysis; lumped parameter networks; microwave amplifiers; exponential factor; finite difference time domain method; heterojunction FET; linear field-effect transistors; microwave HJ-FET amplifier; nonzero transconductance delay parameter; phase delay; rational function; scattering parameters; two-port lumped-network FDTD method; Admittance; Delay; Equivalent circuits; FETs; Finite difference methods; Frequency; Maxwell equations; Time domain analysis; Transconductance; Transmission line matrix methods;
Conference_Titel :
Antennas and Propagation Society International Symposium 2006, IEEE
Conference_Location :
Albuquerque, NM
Print_ISBN :
1-4244-0123-2
DOI :
10.1109/APS.2006.1710967
