Title :
W-Band Microstrip Oscillator Using InP Gunn Diode
fDate :
May 9 1975-June 11 1987
Abstract :
A low cost, light weight, rugged microstrip oscillator with a very simple structure has been developed in W-Band (34 GHz). The active element is an InP Gunn device operating in its fundamental mode of oscillation. The oscillator provides 35 mW of CW output power and a bias tuning bandwidth of 400 MHz.
Keywords :
Circuits; Diodes; Frequency; Gunn devices; Impedance; Indium phosphide; Microstrip; Oscillators; Power generation; Transformers;
Conference_Titel :
Microwave Symposium Digest, 1987 IEEE MTT-S International
Conference_Location :
Palo Alto, CA, USA
DOI :
10.1109/MWSYM.1987.1132586
