DocumentCode
2695536
Title
W-Band Microstrip Oscillator Using InP Gunn Diode
Author
Singh, D.R.
Volume
2
fYear
1987
fDate
May 9 1975-June 11 1987
Firstpage
981
Lastpage
982
Abstract
A low cost, light weight, rugged microstrip oscillator with a very simple structure has been developed in W-Band (34 GHz). The active element is an InP Gunn device operating in its fundamental mode of oscillation. The oscillator provides 35 mW of CW output power and a bias tuning bandwidth of 400 MHz.
Keywords
Circuits; Diodes; Frequency; Gunn devices; Impedance; Indium phosphide; Microstrip; Oscillators; Power generation; Transformers;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Symposium Digest, 1987 IEEE MTT-S International
Conference_Location
Palo Alto, CA, USA
ISSN
0149-645X
Type
conf
DOI
10.1109/MWSYM.1987.1132586
Filename
1132586
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