DocumentCode
2695655
Title
HEMT Low-Noise Amplifier for Ka-Band
Author
Upton, M.A.G. ; Smith, P.M. ; Chao, P.C.
Volume
2
fYear
1987
fDate
May 9 1975-June 11 1987
Firstpage
1007
Lastpage
1010
Abstract
Using 0.25 micron gate-length High Electron Mobility Transistors (HEMTs), a two-stage amplifier has been developed that demonstrates the potential for high-gain, low-noise pre-amplification at K/sub a/ -band. The amplifier exhibits a noise figure of 4.0 dB with 16.5 dB gain at 37.5 GHz and under slightly different bias conditions shows flat gain of around 11.0 dB from 30.5-37.5 GHz.
Keywords
Assembly; Frequency measurement; Gain measurement; HEMTs; Low-noise amplifiers; Millimeter wave radar; Millimeter wave transistors; Noise figure; Noise measurement; Radar antennas;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Symposium Digest, 1987 IEEE MTT-S International
Conference_Location
Palo Alto, CA, USA
ISSN
0149-645X
Type
conf
DOI
10.1109/MWSYM.1987.1132594
Filename
1132594
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