Title :
HEMT Low-Noise Amplifier for Ka-Band
Author :
Upton, M.A.G. ; Smith, P.M. ; Chao, P.C.
fDate :
May 9 1975-June 11 1987
Abstract :
Using 0.25 micron gate-length High Electron Mobility Transistors (HEMTs), a two-stage amplifier has been developed that demonstrates the potential for high-gain, low-noise pre-amplification at K/sub a/ -band. The amplifier exhibits a noise figure of 4.0 dB with 16.5 dB gain at 37.5 GHz and under slightly different bias conditions shows flat gain of around 11.0 dB from 30.5-37.5 GHz.
Keywords :
Assembly; Frequency measurement; Gain measurement; HEMTs; Low-noise amplifiers; Millimeter wave radar; Millimeter wave transistors; Noise figure; Noise measurement; Radar antennas;
Conference_Titel :
Microwave Symposium Digest, 1987 IEEE MTT-S International
Conference_Location :
Palo Alto, CA, USA
DOI :
10.1109/MWSYM.1987.1132594
