Title :
A Four Stage V-Band MOCVD HEMT Amplifier
Author :
Yau, W. ; Watkins, E.T. ; Wang, S.K. ; Wang, K. ; Klatskin, B.
fDate :
May 9 1975-June 11 1987
Abstract :
V-band multi-stage Low Noise Amplifiers (LNA) were developed utilizing MOCVD High Electron Mobility Transistors (HEMTs). The amplifiers have demonstrated 16.57 dB gain with an associated noise figure of 5.65 dB and over 19 dB gain with 7.91 dB noise figure at 60.4 GHz. Another amplifier achieved over 5GHz bandwidth with greater than 14dB gain. The amplifier is integrated in a single housing that is 1.75 inch long.
Keywords :
Equivalent circuits; Frequency; Gallium arsenide; HEMTs; MOCVD; Millimeter wave technology; Noise figure; Performance gain; Probes; Radiofrequency amplifiers;
Conference_Titel :
Microwave Symposium Digest, 1987 IEEE MTT-S International
Conference_Location :
Palo Alto, CA, USA
DOI :
10.1109/MWSYM.1987.1132596
