Title :
Reliability of Super Low Noise HEMTs
Author :
Hayashi, K. ; Sonoda, T. ; Yamaguchi, T. ; Nagahamar, K. ; Yamanouchi, M. ; Takamiya, S. ; Mitsui, S.
fDate :
May 9 1975-June 11 1987
Abstract :
The first report on a comprehensive study of the reliability of super low noise HEMTs with a typical noise figure of 1.2 dB at 12GHz is presented. No failure was observed in both DC running and high temperature storage tests during 2000 hours. These successful results were achieved by a newly developed low temperature ohmic sintering technology and a novel Ni/Al gate.
Keywords :
Gallium arsenide; HEMTs; Large scale integration; Life testing; MODFETs; Molecular beam epitaxial growth; Noise figure; Noise measurement; Packaging; Temperature;
Conference_Titel :
Microwave Symposium Digest, 1987 IEEE MTT-S International
Conference_Location :
Palo Alto, CA, USA
DOI :
10.1109/MWSYM.1987.1132598
