A new process for thinned, back-illuminated CCD imager devices

Author

Huang, C.M. ; Burke, B.E. ; Kosicki, B.B. ; Mountain, R.W. ; Daniels, P.J. ; Harrison, D.C. ; Lincoln, G.A. ; Usiak, N. ; Kaplan, M.A. ; Forte, A.R.

Author_Institution

MIT Lincoln Lab., Lexington, MA, USA

fYear

1989

fDate

17-19 May 1989

Firstpage

98

Lastpage

101

Abstract

A manufacturable process for converting a front-illuminated CCD imager to its back-illuminated counterpart is described. Low-light-level imaging is enhanced, especially in the blue and deep-ultraviolet region. Quantum efficiency is significantly improved by forming a shallow p⁺ accumulation layer on the back surface using a laser-induced activation of very-low-energy boron implantation. The fabrication process has been applied to 64-×128-, 420-×420-, and 420-×840-pixel imagers. An example of imaging obtained with the 420-×420-pixel imager is shown and discussed. Experimental results showing the enhanced response of the 64-×128-pixel imager are presented

Keywords

CCD image sensors; integrated circuit manufacture; integrated circuit technology; ion implantation; passivation; 128 pixel; 176400 pixel; 352800 pixel; 420 pixel; 64 pixel; 8192 pixel; 840 pixel; Si:B; back surface passivation; back-illuminated CCD imager; blue spectral region; deep UV region; deep-ultraviolet region; fabrication process; front-illuminated device conversion; laser-induced activation; low-light-level imaging enhancement; manufacturable process; quantum efficiency improvement; shallow p⁺ accumulation layer; thinned devices; Biomembranes; Charge coupled devices; Etching; Glass; Optical device fabrication; Passivation; Silicon; Substrates; Surface emitting lasers; Wafer bonding;

fLanguage

English

Publisher

ieee

Conference_Titel

VLSI Technology, Systems and Applications, 1989. Proceedings of Technical Papers. 1989 International Symposium on

Conference_Location

Taipei

Type

conf

DOI

10.1109/VTSA.1989.68591

Filename

68591