Title :
Dual-Wavelength Master Oscillator Power Amplifier Diode-Laser System at 785 nm
Author :
Maiwald, Martin ; Klehr, Andreas ; Sumpf, Bernd ; Erbert, Götz ; Trankle, Gunther
Author_Institution :
Ferdinand-Braun-Inst., Leibniz-Inst. fur Hochstfrequenztechnik, Berlin, Germany
Abstract :
A dual-wavelength master oscillator (MO) power amplifier (PA) diode-laser system emitting at 785 nm suitable for shifted excitation Raman difference spectroscopy is presented. The laser system consists of a distributed Bragg reflector V-branch diode laser as a dual-wavelength MO and a ridge waveguide PA. The system reaches an optical output power of more than 750 mW at 25 °C. Optical spectra show wavelength stabilized single mode emission at 784.60 and 785.22 nm over the whole power range with a spectral width ≤10 pm (≤0.5 cm-1) and a spectral distance of 0.62 nm (≤10.1 cm -1).
Keywords :
Raman spectra; distributed Bragg reflector lasers; laser beams; power amplifiers; ridge waveguides; semiconductor optical amplifiers; V-branch diode laser; distributed Bragg reflector; dual-wavelength master oscillator power amplifier diode-laser system; optical output power; optical spectra; ridge waveguide power amplifier; shifted excitation Raman difference spectroscopy; single mode emission; spectral distance; spectral width; temperature 25 degC; wavelength 784.60 nm to 785.22 nm; Diode lasers; Distributed Bragg reflectors; Laser excitation; Measurement by laser beam; Optical amplifiers; Semiconductor lasers; Stimulated emission; 785 nm; DBR; Diode lasers; Raman spectroscopy; SERDS; Y-branch; semiconductor lasers; shifted excitation Raman difference spectroscopy;
Journal_Title :
Photonics Technology Letters, IEEE
DOI :
10.1109/LPT.2014.2314140
