• DocumentCode
    2696259
  • Title

    Power MOSFET failure mechanisms

  • Author

    Singh, Prabjit

  • Author_Institution
    Int. Bus. Machines Corp., Poughkeepsie, NY, USA
  • fYear
    2004
  • fDate
    19-23 Sept. 2004
  • Firstpage
    499
  • Lastpage
    502
  • Abstract
    Power MOSFET failure mechanisms are reviewed and discussed with emphasis on the parasitic bipolar transistor (BJT) turn on. The first two failure mechanisms reviewed result from high dVDS/dt. The third failure mechanism results from the slow reverse recovery of the MOSFET body diode and the fourth is a single event breakdown due to inadequate voltage derating of the MOSFET. A condition for the parasitic BJT turn on is derived and used to discuss the failure mechanisms.
  • Keywords
    electric breakdown; failure analysis; power MOSFET; power bipolar transistors; power semiconductor diodes; recovery; BJT; MOSFET body diode; bipolar transistor; failure mechanism; parasitic BJT turn on; power MOSFET; reverse recovery; single event breakdown; Bipolar transistors; Breakdown voltage; Electrons; Failure analysis; MOS devices; MOSFET circuits; Metallization; Power MOSFET; Switches; Threshold voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Telecommunications Energy Conference, 2004. INTELEC 2004. 26th Annual International
  • Print_ISBN
    0-7803-8458-X
  • Type

    conf

  • DOI
    10.1109/INTLEC.2004.1401515
  • Filename
    1401515
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2696259