Title :
Power MOSFET failure mechanisms
Author_Institution :
Int. Bus. Machines Corp., Poughkeepsie, NY, USA
Abstract :
Power MOSFET failure mechanisms are reviewed and discussed with emphasis on the parasitic bipolar transistor (BJT) turn on. The first two failure mechanisms reviewed result from high dVDS/dt. The third failure mechanism results from the slow reverse recovery of the MOSFET body diode and the fourth is a single event breakdown due to inadequate voltage derating of the MOSFET. A condition for the parasitic BJT turn on is derived and used to discuss the failure mechanisms.
Keywords :
electric breakdown; failure analysis; power MOSFET; power bipolar transistors; power semiconductor diodes; recovery; BJT; MOSFET body diode; bipolar transistor; failure mechanism; parasitic BJT turn on; power MOSFET; reverse recovery; single event breakdown; Bipolar transistors; Breakdown voltage; Electrons; Failure analysis; MOS devices; MOSFET circuits; Metallization; Power MOSFET; Switches; Threshold voltage;
Conference_Titel :
Telecommunications Energy Conference, 2004. INTELEC 2004. 26th Annual International
Print_ISBN :
0-7803-8458-X
DOI :
10.1109/INTLEC.2004.1401515
