Long-wavelength SiGe/Si MQW resonant-cavity-enhanced photodetectors (RCE-PD) for application in optical fiber communication network

Author

Wang, Qiming ; Li, Cheng ; Buwen Chen ; Yang, Qinqing ; Lei, Zhenglin ; Yu, Jinzhong

Author_Institution

State Key Lab. on Integrated Optoelectronics, Chinese Acad. of Sci., Beijing, China

fYear

2003

fDate

12-14 Sept. 2003

Firstpage

1

Lastpage

2

Abstract

The paper presents long-wavelength SiGe/Si MQW resonant-cavity-enhanced photodetectors for application in optical fibre communication network. Two types of SiGe/Si MQW RCE photodetector with a narrow-band response at 1.3 μm have been successfully obtained for the first time. One type is a RCE-PIN photodetector grown on SIMOX substrate and the other type is a RCE-MSM photodetector fabricated using wafer bonding technology. The characteristics of each detector is investigated.

Keywords

germanium compounds; optical communication equipment; optical fibre communication; p-i-n photodiodes; photodetectors; semiconductor quantum wells; silicon; silicon compounds; wafer bonding; RCE-PIN photodetector; SIMOX substrate; Si; SiGe-Si; SiGe/Si MQW RCE photodetector; long-wavelength SiGe/Si MQW resonant-cavity-enhanced photodetectors; narrow-band response; optical fiber communication network; wafer bonding technology; Distributed Bragg reflectors; Germanium silicon alloys; Intelligent networks; Laboratories; Optical fiber communication; Photodetectors; Quantum well devices; Reflectivity; Resonance; Silicon germanium;

fLanguage

English

Publisher

ieee

Conference_Titel

Optoelectronics, Proceedings of the Sixth Chinese Symposium

Print_ISBN

0-7803-7887-3

Type

conf

DOI

10.1109/COS.2003.1278150

Filename

1278150