Formation and characteristics of wide band gap II-VI semiconductor quantum dots

Author

Fan, X.W ; Shan, C.X. ; Yang, Z. ; Zhang, J.Y. ; Liu, Y.C. ; Lu, Y.M. ; Shen, D.Z.

Author_Institution

Key Lab. of Excited State Process, Changchun Inst. of Opt., China

fYear

2003

fDate

12-14 Sept. 2003

Firstpage

23

Lastpage

26

Abstract

CdSe and ZnCdSe quantum dots (QDs) were grown under Stranski-Krastanow (S-K) mode by low-pressure metalorganic chemical vapor deposition (LP-MOCVD). The formation process of CdSe QDs below critical thickness was observed by atomic force microscopy (AFM). The formation mechanism of CdSe QDs below the critical thickness was due to the effect of surface diffusion and strain release. ZnCdSe QDs were grown based on the calculated critical thickness. Two kinds of variations in the ZnCdSe QDs appeared over time, the Ostwald ripening process and dot formation process. ZnSeS dots were grown under Volmer-Weber (V-W) mode. With increasing the growth duration, the size of dots becomes larger and the density decreases, which is explained by virtue of the surface free energy.

Keywords

II-VI semiconductors; MOCVD; atomic force microscopy; cadmium compounds; free energy; selenium compounds; semiconductor quantum dots; surface diffusion; surface energy; wide band gap semiconductors; zinc compounds; AFM; CdSe QDs; CdSe-GaAs; GaAs; Ostwald ripening process; Stranski-Krastanow mode; Volmer-Weber mode; ZnCdSe QDs; ZnCdSe quantum dots; ZnCdSe-GaAs; ZnSeS dots; atomic force microscopy; critical thickness; dot formation process; formation process; low-pressure metalorganic chemical vapor deposition; strain release; surface diffusion; surface free energy; wide band gap II-VI semiconductor quantum dots; Atom optics; Atomic force microscopy; Capacitive sensors; Gallium arsenide; Optical devices; Quantum dots; Quantum mechanics; US Department of Transportation; Wideband; Zinc compounds;

fLanguage

English

Publisher

ieee

Conference_Titel

Optoelectronics, Proceedings of the Sixth Chinese Symposium

Print_ISBN

0-7803-7887-3

Type

conf

DOI

10.1109/COS.2003.1278156

Filename

1278156