NBTI lifetime prediction in SiON p-MOSFETs by H/H2 Reaction-Diffusion(RD) and dispersive hole trapping model

I_DLIN shift due to NBTI is measured using UF-OTF I_DLIN method in PNO, RTNO and RTNO+PN SiON p-MOSFETs having a wide range of EOT and %N. Time evolution of I_DLIN shift at different stress EOX and T is modeled from ultra-short to long stress time using non-dispersive H/H₂ RD model governed N_IT and dispersive N_h components. N_IT and N_h model parameters show consistent E_OX and T dependent behavior across all devices. Finally, extrapolated tt_F values are obtained for different E_OX from conventional power-law fit and the proposed model, and are compared across different measurement delay. Inconsistencies associated with conventional power-law fit extrapolation method are highlighted, which justifies the use of proposed model.