A generalized, IB-independent, physical HCI lifetime projection methodology based on universality of hot-carrier degradation

We develop a novel approach for hot carrier lifetime prediction based on the `universality of HCI degradation´ that not only generalizes the classical theory by obviating the measurement of I_B, but also allows prediction of HCI lifetime over a broad range of technology nodes, bias conditions, and device geometries. We explain the shape of the degradation vs. time characteristic based on the energy distribution of the Si-O bonds, and we show, based on the bond-dispersion model, that the degradation shows similar features for both ON- and OFF-state bias conditions.