Improvements of NBTI reliability in SiGe p-FETs

NBTI reliability of buried SiGe channel p-FETs is investigated as a function of Ge concentration, SiGe layer thickness and Si cap thickness. Measurements show that NBTI reliability can be dramatically improved by varying these three parameters, i.e., increasing the Ge fraction, increasing the thickness of the SiGe layer, and reducing the Si cap thickness. Consequently, it is demonstrated that SiGe devices are a promising option for improving NBTI in highly-scaled sub-1nm EOT pFETs.