Title :
Microwave properties of GaAlAs/GaAs MQW traveling-wave interferometer optical modulator
Author :
Wang, M.H. ; Zhou, J.Y. ; Zhou, X.P. ; Li, X.H. ; Jiang, X.Q.
Author_Institution :
Dept. of Inf. Sci., Zhejiang Univ., Hangzhou, China
Abstract :
The Mach-Zehnder Interferometer traveling-wave modulator designed by method of lines is fabricated on the substrate of semi-insulator GaAs, adopting the asymmetric multiple quantum wells with larger change of field-induced reflective index. In order to reduce the microwave loss by the unnecessary carriers, ridge waveguide is used and a mesa is wet etched. Then the microwave frequency response are measured and analyzed. It shows that the frequency response drops faster at lower frequency, and keeps no evident drop in the range of 2.5∼20 GHz which means the bandwidth of 20 GHz, and even larger for the limitation of measurement. Nevertheless, the microwave loss is relatively large. Finally, the reason is argued and the improving ways are proposed.
Keywords :
Mach-Zehnder interferometers; aluminium compounds; electro-optical modulation; etching; gallium arsenide; method of lines; microwave spectra; optical communication equipment; optical fabrication; ridge waveguides; semiconductor quantum wells; 2.5 to 20 GHz; GaAlAs-GaAs; GaAlAs/GaAs MQW traveling-wave interferometer optical modulator; GaAs; Mach-Zehnder interferometer traveling-wave modulator; asymmetric multiple quantum wells; field-induced reflective index; method of lines; microwave frequency response; microwave loss; microwave properties; ridge waveguide; semiinsulator GaAs; wet etching; Design methodology; Frequency measurement; Gallium arsenide; Microwave frequencies; Optical interferometry; Optical losses; Optical modulation; Optical waveguides; Quantum well devices; Wet etching;
Conference_Titel :
Optoelectronics, Proceedings of the Sixth Chinese Symposium
Print_ISBN :
0-7803-7887-3
DOI :
10.1109/COS.2003.1278168
