DocumentCode
2696777
Title
400nm InGaN/GaN and InGaN/AlGaN multiquantum well light-emitting diodes
Author
Chang, S.J. ; Kuo, C.H. ; Su, Y.K. ; Wu, L.W. ; Sheu, J.K. ; Wen, T.C. ; Lai, W.C. ; Chen, J.F. ; Tsai, J.M.
Author_Institution
Inst. of Microelectron., Nat. Cheng Kung Univ., Tainan, Taiwan
fYear
2003
fDate
12-14 Sept. 2003
Firstpage
91
Lastpage
94
Abstract
400 nm In0.05Ga0.95N/GaN MQW light emitting diode (LED) structure and In0.05Ga0.95N/Al0.1Ga0.9N LED structure were both prepared by organometallic vapor phase epitaxy (OMVPE). It was found that the use of Al0.1Ga0.9N as the material for barrier layers would not degrade crystal quality of the epitaxial layers. It was also found that the 20 mA electroluminescence (EL) intensity of InGaN/AlGaN multiquantum well (MQW) LED was two times larger than that of the InGaN/GaN MQW LED. The larger maximum output intensity and the fact that maximum output intensity occurred at larger injection current suggest that AlGaN barrier layers can provide a better carrier confinement and effectively reduce leakage current.
Keywords
III-V semiconductors; aluminium compounds; electroluminescence; gallium compounds; indium compounds; light emitting diodes; semiconductor epitaxial layers; semiconductor quantum wells; vapour phase epitaxial growth; wide band gap semiconductors; 20 mA; 20 mA electroluminescence intensity; 400 nm; 400 nm In0.05Ga0.95N/GaN MQW light emitting diode; 400 nm InGaN/AlGaN multiquantum well light-emitting diodes; 400 nm InGaN/GaN multiquantum well light-emitting diodes; AlGaN barrier layers; In0.05Ga0.95N-Al0.1Ga0.9N; In0.05Ga0.95N-GaN; In0.05Ga0.95N/Al0.1Ga0.9N LED structure; InGaN/AlGaN multiquantum well LED; InGaN/GaN MQW LED; MQW; barrier layers; carrier confinement; epitaxial layers; injection current; leakage current; organometallic vapor phase epitaxy; Aluminum gallium nitride; Carrier confinement; Crystalline materials; Degradation; Electroluminescence; Epitaxial growth; Epitaxial layers; Gallium nitride; Light emitting diodes; Quantum well devices;
fLanguage
English
Publisher
ieee
Conference_Titel
Optoelectronics, Proceedings of the Sixth Chinese Symposium
Print_ISBN
0-7803-7887-3
Type
conf
DOI
10.1109/COS.2003.1278172
Filename
1278172
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