Interpretation of PBTI/ TDDB predicted lifetime based on trap characterization by TSCIS in Vth-adjusted transistors

Author

Sahhaf, S. ; Degraeve, R. ; Srividya, V. ; Cho, M. ; Kauerauf, T. ; Groeseneken, G.

Author_Institution

ESAT Dept., KULeuven, Belgium

fYear

2010

fDate

2-6 May 2010

Firstpage

1078

Lastpage

1081

Abstract

We investigate the change in the energy profile of the initially present HfSiO defects in nMOSFETs after V_th-adjustment by As and Ar implantation. We demonstrate that after implantation, PBTI lifetime is considerably improved as the present shallow traps in the implanted devices are not accessible at real operating conditions. We also study the TDDB to consider the effect of the generated defects with stress and we conclude that the same lifetime within specs is achieved for both no-implant and implanted devices.

Keywords

MOSFET; argon; arsenic; hafnium compounds; ion implantation; semiconductor device reliability; silicon compounds; Ar; As; HfSiO; PBTI-TDDB predicted lifetime; TSCIS; V_th-adjusted transistors; nMOSFET defect; shallow traps; trap characterization; trap spectroscopy by charge injection and sensing; Argon; Character generation; Contamination; Dielectrics; Implants; MOSFETs; Stress; Threshold voltage; Tin; Voltage control; As and Ar implantation; PBTI; TDDB; initial Vth; trap density;

fLanguage

English

Publisher

ieee

Conference_Titel

Reliability Physics Symposium (IRPS), 2010 IEEE International

Conference_Location

Anaheim, CA

ISSN

1541-7026

Print_ISBN

978-1-4244-5430-3

Type

conf

DOI

10.1109/IRPS.2010.5488671

Filename

5488671