A robust ultrafast switching methodology for device parameter characterization of bias-temperature instability

A robust methodology for extracting MOSFET parameters (threshold voltage, V_t and effective mobility, μ̅_eff) affected by the bias-temperature instability phenomenon is presented. The method is based on customary pulsed current-voltage measurement hardware and hence may be readily implemented using commercially available set-ups. Application of this method for V_t and μ̅_eff extraction of a 1.8- nm thick SiON gate p-MOSFET under negative-bias temperature stress is demonstrated.