DocumentCode
2696874
Title
Improvement of characteristic temperature for AlGaInP laser diodes
Author
Chu, Jen-Yu ; Hung, Cha-Chang ; Huang, Man-Fang ; Lin, Chau-Yang ; Yang, Michael
Author_Institution
Visual Photonics Epitaxy Inc., Taoyuan, Taiwan
fYear
2003
fDate
12-14 Sept. 2003
Firstpage
108
Lastpage
111
Abstract
An optimum structure of 650 nm-band compressive-strained AlGaInP MQW lasers with improved temperature characteristics is described. The comparison results of two different confinement layers and two different quantum well numbers, by their distinct performance of temperature dependence, will be demonstrated. With the optimized structure, the maximum operating temperature for the AlGaInP laser diodes can be improved.
Keywords
Debye temperature; III-V semiconductors; aluminium compounds; gallium compounds; indium compounds; quantum well lasers; semiconductor device measurement; semiconductor device testing; semiconductor quantum wells; thermo-optical effects; 650 nm; AlGaInP; characteristic temperature; compressive-strained MQW lasers; confinement layers; laser diodes; quantum well numbers; Conductivity; DVD; Diode lasers; Doping; Equations; Gallium arsenide; Quantum well devices; Temperature dependence; Thermal resistance; Threshold current;
fLanguage
English
Publisher
ieee
Conference_Titel
Optoelectronics, Proceedings of the Sixth Chinese Symposium
Print_ISBN
0-7803-7887-3
Type
conf
DOI
10.1109/COS.2003.1278177
Filename
1278177
Link To Document