Title :
Improvement of characteristic temperature for AlGaInP laser diodes
Author :
Chu, Jen-Yu ; Hung, Cha-Chang ; Huang, Man-Fang ; Lin, Chau-Yang ; Yang, Michael
Author_Institution :
Visual Photonics Epitaxy Inc., Taoyuan, Taiwan
Abstract :
An optimum structure of 650 nm-band compressive-strained AlGaInP MQW lasers with improved temperature characteristics is described. The comparison results of two different confinement layers and two different quantum well numbers, by their distinct performance of temperature dependence, will be demonstrated. With the optimized structure, the maximum operating temperature for the AlGaInP laser diodes can be improved.
Keywords :
Debye temperature; III-V semiconductors; aluminium compounds; gallium compounds; indium compounds; quantum well lasers; semiconductor device measurement; semiconductor device testing; semiconductor quantum wells; thermo-optical effects; 650 nm; AlGaInP; characteristic temperature; compressive-strained MQW lasers; confinement layers; laser diodes; quantum well numbers; Conductivity; DVD; Diode lasers; Doping; Equations; Gallium arsenide; Quantum well devices; Temperature dependence; Thermal resistance; Threshold current;
Conference_Titel :
Optoelectronics, Proceedings of the Sixth Chinese Symposium
Print_ISBN :
0-7803-7887-3
DOI :
10.1109/COS.2003.1278177
