Title :
HCI and NBTI including the effect of back-biasing in thin-BOX FD-SOI CMOSFETs
Author :
Ishigaki, T. ; Tsuchiya, R. ; Morita, Y. ; Yoshimoto, H. ; Sugii, N. ; Kimura, S.
Author_Institution :
Central Res. Lab., Hitachi, Ltd., Tokyo, Japan
Abstract :
Hot carrier injection (HCI) and negative bias temperature instability (NBTI) of fully depleted silicon-on-insulator (FD-SOI) CMOSFETs with thin-buried oxide (BOX) were investigated for the first time. A comparison with conventional bulk devices showed that no halo implant in this structure produces better reliability. The impact of back-biasing in thin-BOX FD-SOI devices on reliability is also reported.
Keywords :
CMOS integrated circuits; MOSFET; hot carriers; semiconductor device reliability; HCI; NBTI; back-biasing effect; bulk devices; full depleted silicon-on-insulator CMOSFET; hot carrier injection; negative bias temperature instability; thin-BOX FD-SOI CMOSFET; thin-buried oxide; CMOSFETs; Degradation; Doping; Human computer interaction; Implants; Laboratories; MOSFETs; Niobium compounds; Stress; Titanium compounds; FD-SOI; HCI; NBTI; back-bias; thin-BOX;
Conference_Titel :
Reliability Physics Symposium (IRPS), 2010 IEEE International
Conference_Location :
Anaheim, CA
Print_ISBN :
978-1-4244-5430-3
DOI :
10.1109/IRPS.2010.5488676
