Title :
GaAsSb/GaAs type-II quantum well and its application on ∼1.3 μm laser
Author :
Lin, Hao-Hsiung ; Liu, Po-Wei ; Chen, Jhe-Ren
Author_Institution :
Graduate Inst. of Electron. Eng., Nat. Taiwan Univ., Taipei, Taiwan
Abstract :
The band offset of the type-II GaAs0.7Sb0.3/GaAs quantum well (QW) is studied. We propose an extrapolation method to remove the band-bending effect and determine the flat-band transition energy of the type-II QW from photoluminescence (PL) measurement. Then, we compare the PL peak energies of the type-II GaAs0.7Sb0.3/GaAs QW and the type-I Al0.3Ga0.7As/GaAs0.7Sb0.3 QW to obtain the strained band gap energy of GaAs0.7Sb0.3 and the valence-band-offset ratio of the type-II QW. The obtained band gap energy and valence-band-offset ratio are 1.01 eV and 1.15. GaAsSb/GaAs double-quantum-well lasers were also grown and fabricated. The laser demonstrates a very low threshold current density of 210 A/cm2 with an emission wavelength of 1.28 μm.
Keywords :
III-V semiconductors; aluminium compounds; arsenic compounds; current density; energy gap; extrapolation; gallium arsenide; gallium compounds; infrared spectra; photoluminescence; quantum well lasers; semiconductor device testing; semiconductor quantum wells; valence bands; 1.01 eV; 1.28 mum; Al0.3Ga0.7As-GaAs0.7Sb0.3; GaAs0.7Sb0.3-GaAs; PL peak energies; band offset; band-bending effect; double-quantum-well lasers; extrapolation method; flat-band transition energy; photoluminescence; strained band gap energy; threshold current density; type-II quantum well; valence-band-offset ratio; Gallium arsenide; Laser transitions; Molecular beam epitaxial growth; Photonic band gap; Quantum dot lasers; Quantum well lasers; Semiconductor lasers; Substrates; Surface emitting lasers; Vertical cavity surface emitting lasers;
Conference_Titel :
Optoelectronics, Proceedings of the Sixth Chinese Symposium
Print_ISBN :
0-7803-7887-3
DOI :
10.1109/COS.2003.1278178
