Stabilization of temperature characteristics of micromirror for low-voltage driving using thin film torsion bar of tensile poly-Si

Author

Sasaki, Minoru ; Fujishima, Masayuki ; Hane, Kazuhiro ; Miura, Hideo

Author_Institution

Dept. of Adv. Sci. & Technol., Toyota Technol. Inst., Nagoya

fYear

2008

fDate

11-14 Aug. 2008

Firstpage

120

Lastpage

121

Abstract

The micromirror with the tense thin film torsion bar can realize the low-voltage driving. The temperature characteristic is improved using polycrystalline (poly-) Si thin film taking advantage of the following features. The large tensile stress is obtained by the crystallization of amorphous (a-) Si film. The doping realizes the electrical connection. The poly-Si has the almost same coefficient of thermal expansion (CTE) with that of Si substrate.

Keywords

amorphous semiconductors; electro-optical devices; micro-optomechanical devices; micromirrors; piezo-optical effects; semiconductor thin films; thermal expansion; Si; amorphous Si film; crystallization; doping; electrical connection; low-voltage driving; micromirror; polycrystalline Si thin film; temperature stabilization; tensile poly-Si; tensile stress; thermal expansion coefficient; thin film torsion bar; Amorphous materials; Crystallization; Doping; Micromirrors; Semiconductor films; Semiconductor thin films; Temperature; Tensile stress; Thermal expansion; Transistors; crystallization induced stress; micromirror; temperature characteristics; tensile stress; thin film torsion bar;

fLanguage

English

Publisher

ieee

Conference_Titel

Optical MEMs and Nanophotonics, 2008 IEEE/LEOS Internationall Conference on

Conference_Location

Freiburg

Print_ISBN

978-1-4244-1917-3

Electronic_ISBN

978-1-4244-1918-0

Type

conf

DOI

10.1109/OMEMS.2008.4607858

Filename

4607858