DocumentCode :
2697017
Title :
Ultra-wideband bismuth-based EDFA for DWDM systems
Author :
Guan, Bai-Ou ; Tam, Hwa-Yaw ; Liu, Shun-Yee ; Wai, P.K.A. ; Sugimoto, N.
Author_Institution :
Dept. of Electr. Eng., Hong Kong Polytech. Univ., Kowloon, China
fYear :
2003
fDate :
12-14 Sept. 2003
Firstpage :
147
Lastpage :
149
Abstract :
The ultra-wideband DWDM amplification of the lanthanum co-doped bismuth-based erbium-doped fiber (Bi-EDF) amplifier is demonstrated. Over 20 dB of signal gain and NF less than 6.7 dB was achieved for the 50 GHz spacing DWDM signal spreading over 58 nm wavelength range from 1554 nm to 1612 nm, by employing 253 cm long Bi-EDF pumped with 1480 nm laser. The gain remained 18.2 dB at 1616 nm, and 15.7 dB at 1620 nm. The NF at 1620 nm was only 6.6 dB.
Keywords :
bismuth compounds; erbium; infrared spectra; lanthanum; optical communication equipment; optical fibre amplifiers; optical pumping; wavelength division multiplexing; 1480 nm; 15.7 dB; 1554 to 1612 nm; 1620 nm; 18.2 dB; 253 cm; 50 GHz; 6.6 dB; DWDM systems; bismuth-based EDFA; ultra-wideband EDFA; Erbium; Erbium-doped fiber amplifier; Light sources; Noise measurement; Optical fiber communication; Optical fiber devices; Pump lasers; Silicon compounds; Ultra wideband technology; Wavelength division multiplexing;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Optoelectronics, Proceedings of the Sixth Chinese Symposium
Print_ISBN :
0-7803-7887-3
Type :
conf
DOI :
10.1109/COS.2003.1278187
Filename :
1278187
Link To Document :
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