• DocumentCode
    2697017
  • Title

    Ultra-wideband bismuth-based EDFA for DWDM systems

  • Author

    Guan, Bai-Ou ; Tam, Hwa-Yaw ; Liu, Shun-Yee ; Wai, P.K.A. ; Sugimoto, N.

  • Author_Institution
    Dept. of Electr. Eng., Hong Kong Polytech. Univ., Kowloon, China
  • fYear
    2003
  • fDate
    12-14 Sept. 2003
  • Firstpage
    147
  • Lastpage
    149
  • Abstract
    The ultra-wideband DWDM amplification of the lanthanum co-doped bismuth-based erbium-doped fiber (Bi-EDF) amplifier is demonstrated. Over 20 dB of signal gain and NF less than 6.7 dB was achieved for the 50 GHz spacing DWDM signal spreading over 58 nm wavelength range from 1554 nm to 1612 nm, by employing 253 cm long Bi-EDF pumped with 1480 nm laser. The gain remained 18.2 dB at 1616 nm, and 15.7 dB at 1620 nm. The NF at 1620 nm was only 6.6 dB.
  • Keywords
    bismuth compounds; erbium; infrared spectra; lanthanum; optical communication equipment; optical fibre amplifiers; optical pumping; wavelength division multiplexing; 1480 nm; 15.7 dB; 1554 to 1612 nm; 1620 nm; 18.2 dB; 253 cm; 50 GHz; 6.6 dB; DWDM systems; bismuth-based EDFA; ultra-wideband EDFA; Erbium; Erbium-doped fiber amplifier; Light sources; Noise measurement; Optical fiber communication; Optical fiber devices; Pump lasers; Silicon compounds; Ultra wideband technology; Wavelength division multiplexing;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Optoelectronics, Proceedings of the Sixth Chinese Symposium
  • Print_ISBN
    0-7803-7887-3
  • Type

    conf

  • DOI
    10.1109/COS.2003.1278187
  • Filename
    1278187