Title :
Monolithic integration of a tunable photodetector based on InP/air-gap Fabry-Pérot filters
Author :
Kusserow, Thomas ; Zamora, Ricardo ; Sonksen, Julian ; Dharmarasu, Nethaji ; Hillmer, Hartmut ; Nakamura, Tetsuji ; Hayakawa, Tetsuo ; Vengatesan, Balasubramanian
Author_Institution :
Inst. of Nanostruct. Technol. & Analytics, Univ. of Kassel, Kassel
Abstract :
We present a tunable photodetector MEMS device consisting of an InP/air-gap Fabry-Perot filter combined with a pin-photodiode structure. Epitaxial growth and advanced surface micromachining are used for the monolithic integration of both devices. Special process steps regarding detector geometry, photo current and signal quality have been investigated to assure high performance.
Keywords :
III-V semiconductors; electrostatic actuators; gallium arsenide; indium compounds; integrated optics; micro-optics; micromachining; monolithic integrated circuits; optical filters; p-i-n photodiodes; photoconductivity; photodetectors; Fabry-Perot filter; GaInAs-InP; detector geometry; electrostatic actuation; epitaxial growth; monolithic integration; optical MEMS devices; photocurrent; pin-photodiode structure; signal quality; surface micromachining; tunable photodetector; Air gaps; Detectors; Epitaxial growth; Fabry-Perot; Filters; Indium phosphide; Microelectromechanical devices; Micromachining; Monolithic integrated circuits; Photodetectors; GaInAs; InP; air-gap DBR; near infrared; photodetector; pin photodiode; tunable filters;
Conference_Titel :
Optical MEMs and Nanophotonics, 2008 IEEE/LEOS Internationall Conference on
Conference_Location :
Freiburg
Print_ISBN :
978-1-4244-1917-3
Electronic_ISBN :
978-1-4244-1918-0
DOI :
10.1109/OMEMS.2008.4607865
