Monolithic integration of a tunable photodetector based on InP/air-gap Fabry-Pérot filters

Author

Kusserow, Thomas ; Zamora, Ricardo ; Sonksen, Julian ; Dharmarasu, Nethaji ; Hillmer, Hartmut ; Nakamura, Tetsuji ; Hayakawa, Tetsuo ; Vengatesan, Balasubramanian

Author_Institution

Inst. of Nanostruct. Technol. & Analytics, Univ. of Kassel, Kassel

fYear

2008

fDate

11-14 Aug. 2008

Firstpage

134

Lastpage

135

Abstract

We present a tunable photodetector MEMS device consisting of an InP/air-gap Fabry-Perot filter combined with a pin-photodiode structure. Epitaxial growth and advanced surface micromachining are used for the monolithic integration of both devices. Special process steps regarding detector geometry, photo current and signal quality have been investigated to assure high performance.

Keywords

III-V semiconductors; electrostatic actuators; gallium arsenide; indium compounds; integrated optics; micro-optics; micromachining; monolithic integrated circuits; optical filters; p-i-n photodiodes; photoconductivity; photodetectors; Fabry-Perot filter; GaInAs-InP; detector geometry; electrostatic actuation; epitaxial growth; monolithic integration; optical MEMS devices; photocurrent; pin-photodiode structure; signal quality; surface micromachining; tunable photodetector; Air gaps; Detectors; Epitaxial growth; Fabry-Perot; Filters; Indium phosphide; Microelectromechanical devices; Micromachining; Monolithic integrated circuits; Photodetectors; GaInAs; InP; air-gap DBR; near infrared; photodetector; pin photodiode; tunable filters;

fLanguage

English

Publisher

ieee

Conference_Titel

Optical MEMs and Nanophotonics, 2008 IEEE/LEOS Internationall Conference on

Conference_Location

Freiburg

Print_ISBN

978-1-4244-1917-3

Electronic_ISBN

978-1-4244-1918-0

Type

conf

DOI

10.1109/OMEMS.2008.4607865

Filename

4607865