Variability effects on the VT distribution of nanoscale NAND Flash memories

This work investigates the variability effects on the threshold voltage distribution of deca-nanometer NAND Flash memories. Different sources of variability have been considered, evaluating their impact on the neutral, programmed and erased distributions. A compact model that is able to account for the variability effects on the array performance and reliability is presented and used. Monte Carlo simulations have been employed to analyze the contributions of variability when technology nodes scale down and to compare the intrinsic variability with the electron injection statistical fluctuations. A good agreement with experimental data is reached, opening the application of the proposed methodology to investigate the reliability impact of variability on future technology nodes.