• DocumentCode
    2697256
  • Title

    Transition of erase mechanism for MONOS memory depending on SiN composition and its impact on cycling degradation

  • Author

    Fujii, Shosuke ; Fujiki, Jun ; Yasuda, Naoki ; Fujitsuka, Ryota ; Sekine, Katsuyuki

  • Author_Institution
    Adv. LSI Technol. Lab., Toshiba Corp., Yokohama, Japan
  • fYear
    2010
  • fDate
    2-6 May 2010
  • Firstpage
    956
  • Lastpage
    959
  • Abstract
    We clarify the origin of erase improvement in MONOS memories with Si-rich SiN layer, and investigate the impact of erase mechanism on cycling degradation. It is demonstrated that cycling degradation is uniquely determined by charges injected during erase operations irrespective of program/erase condition, number of program/erase cycling, or MONOS structure.
  • Keywords
    MOS memory circuits; silicon compounds; MONOS memory; SiN-SiO2-Si; cycling degradation; erase mechanism transition; program-erase condition; Aluminum oxide; Capacitance-voltage characteristics; Capacitors; Channel bank filters; Charge carrier processes; Degradation; Distributed control; MONOS devices; Nonvolatile memory; Silicon compounds; BE-MONOS; Cycling degradation; MONOS; TANOS;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Reliability Physics Symposium (IRPS), 2010 IEEE International
  • Conference_Location
    Anaheim, CA
  • ISSN
    1541-7026
  • Print_ISBN
    978-1-4244-5430-3
  • Type

    conf

  • DOI
    10.1109/IRPS.2010.5488699
  • Filename
    5488699
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2697256