Title :
Transition of erase mechanism for MONOS memory depending on SiN composition and its impact on cycling degradation
Author :
Fujii, Shosuke ; Fujiki, Jun ; Yasuda, Naoki ; Fujitsuka, Ryota ; Sekine, Katsuyuki
Author_Institution :
Adv. LSI Technol. Lab., Toshiba Corp., Yokohama, Japan
Abstract :
We clarify the origin of erase improvement in MONOS memories with Si-rich SiN layer, and investigate the impact of erase mechanism on cycling degradation. It is demonstrated that cycling degradation is uniquely determined by charges injected during erase operations irrespective of program/erase condition, number of program/erase cycling, or MONOS structure.
Keywords :
MOS memory circuits; silicon compounds; MONOS memory; SiN-SiO2-Si; cycling degradation; erase mechanism transition; program-erase condition; Aluminum oxide; Capacitance-voltage characteristics; Capacitors; Channel bank filters; Charge carrier processes; Degradation; Distributed control; MONOS devices; Nonvolatile memory; Silicon compounds; BE-MONOS; Cycling degradation; MONOS; TANOS;
Conference_Titel :
Reliability Physics Symposium (IRPS), 2010 IEEE International
Conference_Location :
Anaheim, CA
Print_ISBN :
978-1-4244-5430-3
DOI :
10.1109/IRPS.2010.5488699
