Title :
II-VI ultraviolet detectors: issues of detectivity and antireflection coatings
Author :
Lai, L.S. ; Guo, Z. ; Law, W.Y. ; Sou, I.K. ; Wong, G.K.L.
Author_Institution :
Dept. of Phys., Hong Kong Univ. of Sci. & Technol., Kowloon, China
Abstract :
A detectivity study is presented on an MBE- grown ZnS0.58Se0.42 UV photodiode system. The noise spectral density, impulse response time, bandwidth, responsivity, dark current at reverse bias up to 12 V and zero bias resistance were determined. A detectivity as high as 7.1×1014 cmHz12/W-1 has been achieved. A set of devices with single-layer/double-layer anti-reflecting coatings (ARCs) of different thicknesses and compositions were fabricated. The results are in general in good agreement with the prediction from the theories.
Keywords :
II-VI semiconductors; antireflection coatings; molecular beam epitaxial growth; optical films; semiconductor device noise; sulphur compounds; ultraviolet detectors; wide band gap semiconductors; zinc compounds; II-VI ultraviolet detectors; MBE; UV photodiode; ZnS0.58Se0.42; antireflection coatings; bandwidth; dark current; detectivity; impulse response time; noise spectral density; responsivity; zero bias resistance; Capacitance; Coatings; Delay; Gamma ray detection; Infrared detectors; Optical noise; Photodiodes; Radiation detectors; Semiconductor device noise; Semiconductor radiation detectors;
Conference_Titel :
Optoelectronics, Proceedings of the Sixth Chinese Symposium
Print_ISBN :
0-7803-7887-3
DOI :
10.1109/COS.2003.1278202
