DocumentCode :
2697295
Title :
On the physical interpretation of the impact damage model in TDDB of low-k dielectrics
Author :
Lloyd, J.R.
Author_Institution :
Coll. of Nanoscale Sci. & Eng., SUNY Albany, Albany, NY, USA
fYear :
2010
fDate :
2-6 May 2010
Firstpage :
943
Lastpage :
946
Abstract :
In one of the new “root-E” models for TDDB, there is a second term in the exponent representing the probability that there is enough energy to create damage that contributes to breakdown failure. This provides an exponential “1/E” character to the extrapolation to use conditions that predicts lifetimes many orders of magnitude longer than the simple root-E extrapolation. It also predicts a threshold voltage for damage independent of the applied field. It is argued here that the requirement for damage may not be the energy, but the momentum transfer to cause physical damage. The consequences are discussed.
Keywords :
circuit reliability; low-k dielectric thin films; TDDB; breakdown failure; exponential 1/E character; impact damage model; low-k dielectrics; momentum transfer; root-E extrapolation; root-E models; Acceleration; Copper; Dielectrics; Educational institutions; Electric breakdown; Electrons; Extrapolation; Kinetic theory; Power engineering and energy; Threshold voltage; Impact Damage; Low-k Dielelctrics; TDDB; component;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Reliability Physics Symposium (IRPS), 2010 IEEE International
Conference_Location :
Anaheim, CA
ISSN :
1541-7026
Print_ISBN :
978-1-4244-5430-3
Type :
conf
DOI :
10.1109/IRPS.2010.5488700
Filename :
5488700
Link To Document :
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