Title :
Multilayer microwave integrated circuit technology for GaAs power amplifier of personal communication systems
Author :
Toshikawa, N. ; Tateoka, K. ; Miyatsuji, K. ; Makioka, S. ; Kanazawa, K.
Author_Institution :
Electron. Res. Lab., Matsushita Electron. Corp., Osaka, Japan
Abstract :
Multilayer microwave integrated circuit, MuMIC, technology is realized by multilayer substrate of low cofired temperature ceramics. MuMIC multi-chip module (MCM) results in low cost, small size, and many functions for microwave applications. This technology is used for 1.9 GHz digital European cordless telecommunication (DECT) power amplifier. The GaAs MMIC die of the the MuMlC can be less than 1/10 compared to the conventional one by integrating the impedance matching circuits and filters in the layered structure reducing manufacturing cost. The outline of the MuMIC also is smaller than that of the conventional MMIC package. High power-added efficiency of the microwave power amplifier is obtained by taking advantage of the low resistance inner layer line ofthe MuMIC and the low on-resistance FETs.
Keywords :
UHF power amplifiers; cordless telephone systems; hybrid integrated circuits; impedance matching; integrated circuit technology; microwave integrated circuits; microwave power amplifiers; personal communication networks; 1.9 GHz; MuMIC; digital European cordless telecommunication; impedance matching circuits; inner layer line; low cofired temperature ceramics; manufacturing cost; microwave power amplifier; multilayer microwave integrated circuit technology; personal communication systems; power-added efficiency; Ceramics; Cost function; Gallium arsenide; Integrated circuit technology; MMICs; Microwave integrated circuits; Microwave technology; Nonhomogeneous media; Power amplifiers; Temperature;
Conference_Titel :
Solid-State Circuits Conference, 1995. Digest of Technical Papers. 41st ISSCC, 1995 IEEE International
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-2495-1
DOI :
10.1109/ISSCC.1995.535517
