Performances of a 16 K SRAM processed in a 150 nm SIMOX film for high speed applications

Summaary form only given. A 16 K SRAM processed in a SIMOX thin SOI layer obtained with 1300°C furnace annealing without epitaxy is discussed. Address access time as low as 6 ns at 77 K have been obtained. The silicon under the gate is 150 nm thick. The design was optimized for bulk technology. For comparison, the circuits has been processed using a conventional 1.2 μm bulk CMOS technology. For a 5 V power voltage and a temperature of 300 K the address access time is 10-12 ns on SOI and 16-18 ns for bulk. For 1 MHz the active current is 43 nA on SOI and 45 mA on bulk. The study has shown that it is possible to process a bulk design on SOI without major changes. The yield is about 70% by using redundancy and 30% as prime yield. Thus, the use of thin SIMOX film instead of epitaxial layer on SIMOX reduces the cost without reducing the yield