DocumentCode
2697394
Title
CMOS-SOI-MEMS transistor (TMOS) for infrared imaging
Author
Gitelman, Leonid ; Gutman, Zivit ; Bar-Lev, Sharon ; Stolyarova, Sara ; Nemirovsky, Yael
Author_Institution
Dept. of Electr. Eng., Technion - Israel Inst. of Technol., Haifa
fYear
2008
fDate
11-14 Aug. 2008
Firstpage
172
Lastpage
173
Abstract
The novel concept of thermally isolated CMOS-SOI-MEMS transistor serving as IR detector (TMOS) is presented and characterized, showing high potential for thermal imaging, allowing long integration time because of negligible self heating.
Keywords
CMOS integrated circuits; MOSFET; infrared detectors; infrared imaging; micromechanical devices; silicon-on-insulator; CMOS-SOI-MEMS transistor; infrared detector; infrared imaging; thermal imaging; thermal isolation; Bolometers; CMOS technology; Etching; Frequency measurement; Heating; Infrared imaging; MOSFETs; Sensor arrays; Thermal conductivity; Thermal factors;
fLanguage
English
Publisher
ieee
Conference_Titel
Optical MEMs and Nanophotonics, 2008 IEEE/LEOS Internationall Conference on
Conference_Location
Freiburg
Print_ISBN
978-1-4244-1917-3
Electronic_ISBN
978-1-4244-1918-0
Type
conf
DOI
10.1109/OMEMS.2008.4607884
Filename
4607884
Link To Document