Resistance trace modeling and electromigration immortality criterion based on void growth saturation

In this paper, we present our investigations on time evolution of the resistance during EM tests for various j and L conditions at three different temperatures. These resistance traces have been modeled calculating the void volume kinetic. A good agreement with experimental data was found; in particular the resistance saturation regime at low jL was simulated. From this modeling, we propose an immortality criterion depicted by the product jL², based on the limitation of the void growth prior to an electrical detection. In the temperature range investigated, no significant variation was found for this criterion.