Title :
Ultra-Low-K dielectric degradation before breakdown
Author :
Breuer, T. ; Kerst, U. ; Boit, C. ; Langer, E. ; Ruelke, H.
Author_Institution :
Semicond. Devices Div., Tech. Univ. Berlin, Berlin, Germany
Abstract :
This paper presents a basic investigation of Ultra Low K (ULK) SiCOH dielectrics degradation before breakdown. For the first time very early stages of degradation before breakdown have been revealed and a theory of the basic process of ULK alteration under electrical stress has been proposed. Tip electrode test structures have been specifically designed for this investigation in order to determine the location of degradation and breakdown. A stepwise increased voltage stress test with a meticulously observed current in fA range was developed and successfully applied.
Keywords :
dielectric materials; electric breakdown; electrodes; silicon compounds; SiCOH; ULK; dielectric breakdown; electrical stress; tip electrode test structures; ultra-low-k dielectric degradation; voltage stress test; Breakdown voltage; Degradation; Dielectric breakdown; Dielectric materials; Dielectric measurements; Electric breakdown; Electrodes; Integrated circuit interconnections; Stress; Testing; SiCOH; ULK; breakdown; degradation; dielectric; pores; ultra-low-k;
Conference_Titel :
Reliability Physics Symposium (IRPS), 2010 IEEE International
Conference_Location :
Anaheim, CA
Print_ISBN :
978-1-4244-5430-3
DOI :
10.1109/IRPS.2010.5488710
