DocumentCode
2697526
Title
Stoichiometric ECR SiO2 interlayer for polysilicon emitter bipolar transistors using MBE system
Author
Sato, F. ; Takemura, H. ; Tashiro, T. ; Tatsumi, T. ; Niino, T. ; Aizaki, N. ; Nakamae, M.
Author_Institution
NEC Corp., Kanagawa, Japan
fYear
1990
fDate
17-18 Sep 1990
Firstpage
29
Lastpage
32
Abstract
The effect of SiOx interlayer stoichiometry on polysilicon emitter bipolar transistors was investigated. By utilizing a newly developed electron cyclotron resonance (ECR) oxidation technology, SiOx layers (1<x <=2) with different stoichiometries were prepared by changing oxidation temperature in a molecular beam epitaxy growth system. A stoichiometric SiO2 layer can be obtained by ECR oxidation at room temperature SiOx layer stoichiometries were evaluated by X-ray photoelectron spectroscopy. Using the ECR oxidation technology, an experimental polysilicon emitter transistor was prepared. The transistor, having a stoichiometric interfacial SiO2 layer, showed a current gain of 70, which was three times larger than that of a conventional polysilicon emitter transistor
Keywords
X-ray photoelectron spectra; bipolar transistors; elemental semiconductors; molecular beam epitaxial growth; oxidation; semiconductor technology; silicon; silicon compounds; stoichiometry; ECR oxidation; MBE system; Si; X-ray photoelectron spectroscopy; current gain; electron cyclotron resonance; interlayer stoichiometry; oxidation temperature; polysilicon emitter bipolar transistors; stoichiometric interfacial SiO2 layer; Bipolar transistors; Cutoff frequency; Electron emission; Fabrication; Hafnium; Oxidation; Plasma temperature; Surface cleaning; Surface treatment; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Bipolar Circuits and Technology Meeting, 1990., Proceedings of the 1990
Conference_Location
Minneapolis, MN
Type
conf
DOI
10.1109/BIPOL.1990.171109
Filename
171109
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