DocumentCode :
2697560
Title :
Doped RGB organic electroluminescent devices based on a bipolar host material
Author :
Wen, Shin-Wen ; Yen, Chia-Kuo ; Liu, Tswen-Hsin ; Chen, Chin H.
Author_Institution :
Dept. of Appl. Chem., Nat. Chiao Tung Univ., Hsinchu, Taiwan
fYear :
2003
fDate :
12-14 Sept. 2003
Firstpage :
263
Lastpage :
265
Abstract :
Development of RGB doped emitters based on the bipolar host of wide bandgap material, 9,10-bis(2-naphthyl)anthracene (ADN) is described. While the blue and green fluorescent dopants of TBP and C-545T achieved EL efficiencies of 5.1 and 11.2 cd/A, respectively in ADN, the red fluorescent DCJTB dopant needed to be doped in a co-hosted mixture of ADN: AIq3 (60:40) in order to achieve a high efficiency of 4.8 cd/A with a near saturated CIExy = 0.64, 0.35 at 2 % doping. Luminance efficiencies of all three RGB doped emitters in the bipolar ADN based host are not affected by increased drive current density, thus solving the current-induced fluorescence quenching problem often encountered in organic EL devices.
Keywords :
electroluminescence; electroluminescent devices; organic light emitting diodes; organic semiconductors; semiconductor doping; wide band gap semiconductors; 9,10-bis(2-naphthyl)anthracene; ADN; C-545T; DCJTB dopant; EL efficiencies; RGB doped emitters; RGB organic electroluminescent devices; TBP; bipolar host material; fluorescent dopants; luminance efficiencies; Electroluminescent devices; Flat panel displays; Fluorescence; Glass; Indium tin oxide; Organic light emitting diodes; Organic materials; Photonic band gap; Plasma devices; Plasma properties;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Optoelectronics, Proceedings of the Sixth Chinese Symposium
Print_ISBN :
0-7803-7887-3
Type :
conf
DOI :
10.1109/COS.2003.1278219
Filename :
1278219
Link To Document :
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