DocumentCode
2697574
Title
Lifetime extrapolation for Electromigration tests at wafer level with a dedicated device
Author
Chappaz, C. ; Nakkala, P.
Author_Institution
STMicroelectronics, Crolles, France
fYear
2010
fDate
2-6 May 2010
Firstpage
887
Lastpage
889
Abstract
A dedicated new device is proposed to address the electromigration on BEOL (Back-End of Line) at wafer level. A local heat is directly generated around the tested Electromigration via ended Metal line (EVEM) based on a NIST (National Institute of Standard Technology). A coil plays the role of heater and allows separating the temperature stress from the current stress. Black´s parameters obtained and extrapolated lifetimes are closer to package level results. Thermal gradient is minimized and so extrapolated lifetimes are valid.
Keywords
electromigration; extrapolation; wafer level packaging; BEOL; Black parameters; NIST; National Institute of Standard Technology; back-end of line; dedicated device; electromigration tests; ended metal line; lifetime extrapolation; local heat; temperature stress; wafer level; Coils; Electromigration; Extrapolation; Heating; Life testing; NIST; Packaging; Temperature; Thermal resistance; Wafer scale integration; coil; electromigration; lifetime extrapolation; self heating; wafer level;
fLanguage
English
Publisher
ieee
Conference_Titel
Reliability Physics Symposium (IRPS), 2010 IEEE International
Conference_Location
Anaheim, CA
ISSN
1541-7026
Print_ISBN
978-1-4244-5430-3
Type
conf
DOI
10.1109/IRPS.2010.5488713
Filename
5488713
Link To Document