Title :
A case study of high temperature pass analysis using thermal laser stimulation technique
Author :
Lin, Hung Sung ; Wu, Mong Sheng
Author_Institution :
United Microelectron. Corp., Ltd., Hsinchu, Taiwan
Abstract :
The intrinsic carrier concentration ni is highly temperature dependent in non-degenerate semiconductors. At high temperatures, thermally generated electron-hole pairs contribute to the carrier concentrations. As a result, the generation of free carriers can be achieved through light-to-heat conversion using near-infrared (NIR) laser. This paper describes the use of the thermal laser stimulation (TLS) technique to modify the electrical properties of a heated passive device so that the direct failure location can be revealed in order to clarify the cause of the iddq leakage that will disappear during high temperature tests.
Keywords :
carrier density; field effect transistors; laser beam applications; resistors; semiconductor device reliability; NIR laser; direct failure location; heated passive device electrical property; high temperature dependent; high temperature pass analysis; intrinsic carrier concentration; light-to-heat conversion; near-infrared laser; nondegenerate semiconductors; thermal generated electron-hole pairs; thermal laser stimulation technique; Conducting materials; Laser beams; Laser transitions; Optical beams; Optical materials; Photonic band gap; Semiconductor lasers; Temperature dependence; Temperature sensors; Thermal conductivity; NIR; TLS; laser; temperature; thermal;
Conference_Titel :
Reliability Physics Symposium (IRPS), 2010 IEEE International
Conference_Location :
Anaheim, CA
Print_ISBN :
978-1-4244-5430-3
DOI :
10.1109/IRPS.2010.5488717
