A case study of high temperature pass analysis using thermal laser stimulation technique

Author

Lin, Hung Sung ; Wu, Mong Sheng

Author_Institution

United Microelectron. Corp., Ltd., Hsinchu, Taiwan

fYear

2010

fDate

2-6 May 2010

Firstpage

870

Lastpage

873

Abstract

The intrinsic carrier concentration n_i is highly temperature dependent in non-degenerate semiconductors. At high temperatures, thermally generated electron-hole pairs contribute to the carrier concentrations. As a result, the generation of free carriers can be achieved through light-to-heat conversion using near-infrared (NIR) laser. This paper describes the use of the thermal laser stimulation (TLS) technique to modify the electrical properties of a heated passive device so that the direct failure location can be revealed in order to clarify the cause of the iddq leakage that will disappear during high temperature tests.

Keywords

carrier density; field effect transistors; laser beam applications; resistors; semiconductor device reliability; NIR laser; direct failure location; heated passive device electrical property; high temperature dependent; high temperature pass analysis; intrinsic carrier concentration; light-to-heat conversion; near-infrared laser; nondegenerate semiconductors; thermal generated electron-hole pairs; thermal laser stimulation technique; Conducting materials; Laser beams; Laser transitions; Optical beams; Optical materials; Photonic band gap; Semiconductor lasers; Temperature dependence; Temperature sensors; Thermal conductivity; NIR; TLS; laser; temperature; thermal;

fLanguage

English

Publisher

ieee

Conference_Titel

Reliability Physics Symposium (IRPS), 2010 IEEE International

Conference_Location

Anaheim, CA

ISSN

1541-7026

Print_ISBN

978-1-4244-5430-3

Type

conf

DOI

10.1109/IRPS.2010.5488717

Filename

5488717