ZnO thin films grown by plasma-assisted metal-organic vapor phase epitaxy

Author

Guotong Du ; Yuantao Zhang ; Yan Ma ; Xiaotian Yang ; Baijun Zhao ; Boyang Liu

Author_Institution

Jilin Univ., Changchun, China

fYear

2003

fDate

12-14 Sept. 2003

Firstpage

292

Lastpage

296

Abstract

ZnO films were grown by metal-organic chemical vapor deposition (MOCVD) on sapphire and Si substrate. Thermal annealing was performed on ZnO thin films deposited on Si substrate. X-ray diffraction spectra indicated that all ZnO films were strongly c-oriented. Strong ultraviolet (UV) emission was observed. X-ray photoelectron spectroscopy (XPS) measurements were performed to confirm the stoichiometry of ZnO film. Optical pumped UV lasing was obtained at room temperature. N-doped ZnO samples were realized by ionizing N₂ and NH₃. High resistive ZnO films were obtained by N-doping.

Keywords

II-VI semiconductors; MOCVD; X-ray diffraction; X-ray photoelectron spectra; annealing; optical pumping; plasma CVD; semiconductor doping; semiconductor growth; semiconductor thin films; stoichiometry; ultraviolet spectra; wide band gap semiconductors; zinc compounds; 20 degC; Al₂O₃; MOCVD; N-doping; Si; X-ray diffraction spectra; X-ray photoelectron spectroscopy; ZnO; ZnO thin films; optical pumping; plasma-assisted metal-organic vapor phase epitaxy; room temperature; stoichiometry; thermal annealing; Chemical vapor deposition; Epitaxial growth; MOCVD; Optical films; Plasma chemistry; Plasma x-ray sources; Semiconductor films; Substrates; Transistors; Zinc oxide;

fLanguage

English

Publisher

ieee

Conference_Titel

Optoelectronics, Proceedings of the Sixth Chinese Symposium

Print_ISBN

0-7803-7887-3

Type

conf

DOI

10.1109/COS.2003.1278227

Filename

1278227