DocumentCode
2697885
Title
Electrical stress induced degradation in InAs - AlSb HEMTS
Author
DasGupta, S. ; Reed, R.A. ; Schrimpf, R.D. ; Fleetwoo, D.M. ; Shen, X. ; Pantelides, S.T. ; Bergman, J. ; Brar, B.
Author_Institution
EECS Dept., Vanderbilt Univ., Nashville, TN, USA
fYear
2010
fDate
2-6 May 2010
Firstpage
813
Lastpage
817
Abstract
InAs-AlSb HEMTs stressed with hot electrons may exhibit shifts in the peak transconductance towards more negative gate voltages. The devices are most degradation prone in operating conditions with high vertical gate field. Annealing trends and theoretical calculations indicate the possible role of an oxygen-induced metastable defect.
Keywords
aluminium compounds; annealing; high electron mobility transistors; indium compounds; semiconductor device reliability; InAs-AlSb; InAs-AlSb HEMT; annealing; electrical stress induced degradation; high vertical gate field; hot electrons; negative gate voltages; oxygen-induced metastable defect; transconductance; Degradation; Effective mass; Electrons; HEMTs; Leakage current; MODFETs; Metastasis; Stress; Temperature; Threshold voltage; DFT; HEMT; degradation; metastable defect;
fLanguage
English
Publisher
ieee
Conference_Titel
Reliability Physics Symposium (IRPS), 2010 IEEE International
Conference_Location
Anaheim, CA
ISSN
1541-7026
Print_ISBN
978-1-4244-5430-3
Type
conf
DOI
10.1109/IRPS.2010.5488729
Filename
5488729
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