Title :
Time dependent dielectric breakdown and stress induced leakage current characteristics of 8Å EOT HfO2 N-MOSFETS
Author :
O´Connor, R. ; Hughes, Greg ; Kauerauf, Thomas ; Ragnarsson, Lars-Åke
Author_Institution :
Sch. of the Phys. Sci., Dublin City Univ., Dublin, Ireland
Abstract :
In this work we present the time dependent dielectric breakdown (TDDB) characteristics of LaO capped HfO2 layers with an equivalent oxide thickness of 8Å̊. The layers show maximum operating voltages in excess of 1 V. Such high reliability can be attributed to very high Weibull slopes. We examine the origin of the high slopes by a detailed study of the evolution of the stress induced leakage current with time, temperature and stress voltage.
Keywords :
CMOS integrated circuits; MOSFET; hafnium compounds; high-k dielectric thin films; integrated circuit reliability; lanthanum compounds; leakage currents; semiconductor device breakdown; semiconductor device reliability; CMOS reliability; EOT HfO2 N-MOSFET; HfO2; LaO; Weibull slopes; equivalent oxide thickness; high-k dielectric; stress induced leakage current characteristics; stress voltage; time dependent dielectric breakdown; Dielectric breakdown; Dielectric substrates; Electric breakdown; Hafnium oxide; High K dielectric materials; High-K gate dielectrics; Leakage current; Silicon germanium; Stress; Voltage; CMOS reliability; Hafnium oxide; High-k dielectric; stress induced leakage current; time dependent dielectric breakdown;
Conference_Titel :
Reliability Physics Symposium (IRPS), 2010 IEEE International
Conference_Location :
Anaheim, CA
Print_ISBN :
978-1-4244-5430-3
DOI :
10.1109/IRPS.2010.5488730
