DocumentCode
2697936
Title
Frequency-dependent charge-pumping: The depth question revisited
Author
Zhang, F. ; Cheung, K.P. ; Campbell, J.P. ; Sue, J.
Author_Institution
Semicond. Electron. Div., Nat. Inst. of Stand. & Technol., Gaithersburg, MD, USA
fYear
2010
fDate
2-6 May 2010
Firstpage
804
Lastpage
806
Abstract
A popular defect depth-profiling technique, frequency-dependent charge-pumping is carefully re-examined. Without complicated math of modeling, the physics behind the technique is examined clearly. It is shown that there is no unique relationship between the measurement frequency and the probed depth. The conclusion is that frequency-dependent charge-pumping is not a defect depth-profiling technique.
Keywords
circuit reliability; dielectric materials; defect depth-profiling technique; frequency-dependent charge-pumping; gate dielectric; measurement frequency; Charge pumps; Current measurement; Dielectric substrates; Electron traps; Frequency conversion; Frequency measurement; Interface states; NIST; Physics; Tunneling; frequency dependent charge pumping;
fLanguage
English
Publisher
ieee
Conference_Titel
Reliability Physics Symposium (IRPS), 2010 IEEE International
Conference_Location
Anaheim, CA
ISSN
1541-7026
Print_ISBN
978-1-4244-5430-3
Type
conf
DOI
10.1109/IRPS.2010.5488731
Filename
5488731
Link To Document