Practicality of evaluating soft errors in commercial sub-90 nm CMOS for space applications

Author

Pellish, Jonathan A. ; LaBel, Kenneth A.

Author_Institution

Flight Data Syst. & Radiat. Effects Branch, NASA, Greenbelt, MD, USA

fYear

2010

fDate

2-6 May 2010

Firstpage

768

Lastpage

774

Abstract

Inclusion of commercial technologies in civil spaceflight applications is reality. These technologies enable higher performance, reduce power consumption, and ultimately yield better science. However, the benefits do not come without cost, and radiation-induced soft errors in advanced, sub-90 nm CMOS technologies present new challenges. These challenges include sensitivity to proton direct ionization, memory technology evaluation, as well as testing and evaluation complexity.

Keywords

CMOS integrated circuits; avionics; integrated circuit reliability; CMOS technologies; civil spaceflight applications; evaluation complexity; memory technology evaluation; power consumption; proton direct ionization; radiation-induced soft errors; size 90 nm; soft error evaluation; space applications; Aerospace electronics; CMOS technology; Failure analysis; Ionization; NASA; Protons; Radiation effects; Risk analysis; Space technology; Space vehicles; CMOS; heavy ion; memory; proton; soft errors; space environment;

fLanguage

English

Publisher

ieee

Conference_Titel

Reliability Physics Symposium (IRPS), 2010 IEEE International

Conference_Location

Anaheim, CA

ISSN

1541-7026

Print_ISBN

978-1-4244-5430-3

Type

conf

DOI

10.1109/IRPS.2010.5488737

Filename

5488737