Title :
Reliability of Ferroelectric Random Access memory embedded within 130nm CMOS
Author :
Rodriguez, J. ; Remack, K. ; Gertas, J. ; Wang, L. ; Zhou, C. ; Boku, K. ; Rodriguez-Latorre, J. ; Udayakumar, K.R. ; Summerfelt, S. ; Moise, T. ; Kim, D. ; Groat, J. ; Eliason, J. ; Depner, M. ; Chu, F.
Author_Institution :
Texas Instrum. Inc., Dallas, TX, USA
Abstract :
We present results of a comprehensive reliability evaluation of a 2T-2C, 4Mb, Ferroelectric Random Access Memory embedded within a standard 130nm, 5LM Cu CMOS platform. Wear-out free endurance to 5.4 × 1013 cycles and data retention equivalent of 10 years at 85°C is demonstrated. The results show that the technology can be used in a wide range of applications including embedded processing.
Keywords :
CMOS integrated circuits; ferroelectric storage; integrated circuit reliability; random-access storage; CMOS platform; comprehensive reliability evaluation; data retention; embedded processing; ferroelectric random access memory; temperature 85 degC; Capacitors; Circuits; Copper; Ferroelectric films; Ferroelectric materials; Intelligent sensors; Low voltage; Nonvolatile memory; Polarization; Random access memory; cycling endurance; data retention; embedded memory; ferroelectric memory reliability; high-temperature operating life; sof-error rate;
Conference_Titel :
Reliability Physics Symposium (IRPS), 2010 IEEE International
Conference_Location :
Anaheim, CA
Print_ISBN :
978-1-4244-5430-3
DOI :
10.1109/IRPS.2010.5488738
