Reset current distributions in phase change memories

Author

Calderoni, A. ; Ferro, M. ; Ventrice, D. ; Ielmini, D. ; Fantini, P.

Author_Institution

R&D - Technol. Dev., Numonyx, Milan, Italy

fYear

2010

fDate

2-6 May 2010

Firstpage

738

Lastpage

742

Abstract

In this work a new analytical transport model for the readout region of amorphous GST is proposed. The model is employed to assess, through Monte Carlo (MC) simulations, the sources of variability responsible for the width and shape of the readout current distributions of reset bits. The correlation between transport mechanisms and the statistical spread is highlighted, also considering the reset pulses dependence. Furthermore, the temperature effect on the reset bits is addressed. The statistical characterization results are discussed within the framework of the proposed model.

Keywords

Monte Carlo methods; current distribution; phase change memories; Monte Carlo simulations; amorphous GST; phase change memories; readout current distributions; reset current distributions; temperature effect; transport mechanisms; Amorphous materials; Analytical models; Current distribution; Electric resistance; Nonvolatile memory; Phase change materials; Phase change memory; Thermal conductivity; Thermal resistance; Voltage; Non-Volatile Memory modeling; Phase Change Memories (PCM); chalcogenide; reliability modeling; variability effects;

fLanguage

English

Publisher

ieee

Conference_Titel

Reliability Physics Symposium (IRPS), 2010 IEEE International

Conference_Location

Anaheim, CA

ISSN

1541-7026

Print_ISBN

978-1-4244-5430-3

Type

conf

DOI

10.1109/IRPS.2010.5488740

Filename

5488740