DocumentCode :
2698125
Title :
Wave scattering by nonlinear semiconductor layers
Author :
Shramkova, O. ; Bulgakov, A. ; Schuchinsky, A.
Author_Institution :
Dept. of Solid-State Radiophys., NAS of Ukraine, Kharkiv, Ukraine
fYear :
2010
fDate :
6-8 Sept. 2010
Firstpage :
1
Lastpage :
4
Abstract :
The combinatorial frequency generation by the semiconductor layer illuminated by the plane waves of two tones is investigated. The nonlinearity is due to the nonlinear free-carrier current in the semiconductor. The three-wave interaction technique is applied to study the nonlinear processes. The effect of the physical and geometrical parameters of the layers on the reflected and transmitted waves´ intensities of combinatorial frequencies is examined.
Keywords :
light reflection; light scattering; light transmission; optical frequency conversion; semiconductors; combinatorial frequency generation; nonlinear free-carrier current; nonlinear semiconductor layer; reflected waves; scattering wave; three-wave interaction technique; transmitted waves; Dielectrics; Equations; Frequency conversion; Permittivity; Plasmas; Resonant frequency;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Mathematical Methods in Electromagnetic Theory (MMET), 2010 International Conference on
Conference_Location :
Kyiv
Print_ISBN :
978-1-4244-8859-9
Type :
conf
DOI :
10.1109/MMET.2010.5611438
Filename :
5611438
Link To Document :
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