DocumentCode :
2698200
Title :
Effective thermal characteristics to suppress joule heating impacts on electromigration in Cu/low-k interconnects
Author :
Yokogawa, S. ; Tsuchiya, H. ; Kakuhara, Y.
Author_Institution :
Adv. Device Dev. Div., NEC Electron. Corp., Sagamihara, Japan
fYear :
2010
fDate :
2-6 May 2010
Firstpage :
717
Lastpage :
723
Abstract :
We investigated the thermal characteristics of Cu/low-k interconnects to suppress the impact of Joule heating (JH) on electromigration. The thermal time constants in multilayered Cu/low-k interconnects were experimentally investigated for the first time on the basis of the transient thermal response. Furthermore, we analyzed the use of direct radiation through stacked contact/via to suppress the temperature increase from JH. The impact of JH on the critical product of the current density and the line length was also investigated.
Keywords :
copper; electromigration; integrated circuit interconnections; thermal analysis; transient response; Joule heating impact; current density; direct radiation; electromigration; line length; multilayered low-k interconnects; thermal characteristics; thermal time constants; transient thermal response; Acceleration; Annealing; Current density; Electrical resistance measurement; Electromigration; Grain boundaries; Heating; Integrated circuit interconnections; Temperature; Thermal conductivity; Critical product; Electromigration; Joule heating; Thermal conduction; Transient thermal response;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Reliability Physics Symposium (IRPS), 2010 IEEE International
Conference_Location :
Anaheim, CA
ISSN :
1541-7026
Print_ISBN :
978-1-4244-5430-3
Type :
conf
DOI :
10.1109/IRPS.2010.5488745
Filename :
5488745
Link To Document :
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