• DocumentCode
    2698200
  • Title

    Effective thermal characteristics to suppress joule heating impacts on electromigration in Cu/low-k interconnects

  • Author

    Yokogawa, S. ; Tsuchiya, H. ; Kakuhara, Y.

  • Author_Institution
    Adv. Device Dev. Div., NEC Electron. Corp., Sagamihara, Japan
  • fYear
    2010
  • fDate
    2-6 May 2010
  • Firstpage
    717
  • Lastpage
    723
  • Abstract
    We investigated the thermal characteristics of Cu/low-k interconnects to suppress the impact of Joule heating (JH) on electromigration. The thermal time constants in multilayered Cu/low-k interconnects were experimentally investigated for the first time on the basis of the transient thermal response. Furthermore, we analyzed the use of direct radiation through stacked contact/via to suppress the temperature increase from JH. The impact of JH on the critical product of the current density and the line length was also investigated.
  • Keywords
    copper; electromigration; integrated circuit interconnections; thermal analysis; transient response; Joule heating impact; current density; direct radiation; electromigration; line length; multilayered low-k interconnects; thermal characteristics; thermal time constants; transient thermal response; Acceleration; Annealing; Current density; Electrical resistance measurement; Electromigration; Grain boundaries; Heating; Integrated circuit interconnections; Temperature; Thermal conductivity; Critical product; Electromigration; Joule heating; Thermal conduction; Transient thermal response;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Reliability Physics Symposium (IRPS), 2010 IEEE International
  • Conference_Location
    Anaheim, CA
  • ISSN
    1541-7026
  • Print_ISBN
    978-1-4244-5430-3
  • Type

    conf

  • DOI
    10.1109/IRPS.2010.5488745
  • Filename
    5488745