DocumentCode
2698281
Title
Adaptive sensing and design for reliability
Author
Singh, P. ; Sylvester, D. ; Blaauw, D.
Author_Institution
Univ. of Michigan, Ann Arbor, MI, USA
fYear
2010
fDate
2-6 May 2010
Firstpage
676
Lastpage
682
Abstract
Chip lifetime degradation due to oxide breakdown is a major concern for today´s designers. We review existing methods to solve the gate oxide reliability issues and also introduce an in situ degradation monitoring technique. This technique allows early detection of oxide degradation and makes a system aware of its reliability. When used in conjunction with reliability management schemes, it minimizes existing pessimistic reliability margins and allows an improvement in device performance.
Keywords
electric breakdown; integrated circuit design; integrated circuit reliability; adaptive sensing; chip lifetime degradation; gate oxide reliability design; in situ degradation monitoring technique; oxide breakdown; reliability management schemes; Circuits; Degradation; Electric breakdown; Electronics industry; Monitoring; Semiconductor device measurement; Sensor systems; Stress; Temperature sensors; Voltage; oxide degradation; reliability; sensors;
fLanguage
English
Publisher
ieee
Conference_Titel
Reliability Physics Symposium (IRPS), 2010 IEEE International
Conference_Location
Anaheim, CA
ISSN
1541-7026
Print_ISBN
978-1-4244-5430-3
Type
conf
DOI
10.1109/IRPS.2010.5488750
Filename
5488750
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