DocumentCode
2698399
Title
Homoepitaxy of GaN - growth, investigations and applications
Author
Baranowski, J.M. ; Wysmolek, A.
Author_Institution
Warsaw University
fYear
2000
fDate
2000
Firstpage
1
Lastpage
8
Keywords
Buffer layers; Excitons; Gallium nitride; Lattices; Light emitting diodes; Nitrogen; Optical buffering; Stimulated emission; Surface morphology; Temperature;
fLanguage
English
Publisher
ieee
Conference_Titel
Advanced Semiconductor Devices and Microsystems, 2000. ASDAM 2000. The Third International EuroConference on
Print_ISBN
0-7803-5939-9
Type
conf
DOI
10.1109/ASDAM.2000.889441
Filename
889441
Link To Document