Title :
Homoepitaxy of GaN - growth, investigations and applications
Author :
Baranowski, J.M. ; Wysmolek, A.
Author_Institution :
Warsaw University
Keywords :
Buffer layers; Excitons; Gallium nitride; Lattices; Light emitting diodes; Nitrogen; Optical buffering; Stimulated emission; Surface morphology; Temperature;
Conference_Titel :
Advanced Semiconductor Devices and Microsystems, 2000. ASDAM 2000. The Third International EuroConference on
Print_ISBN :
0-7803-5939-9
DOI :
10.1109/ASDAM.2000.889441
