Evaluation of laser planarized second aluminum for semiconductor devices

Author

Boeck, B.A. ; Fu, K.Y. ; Pintchovski, F. ; Crain, N. ; Chen, S. ; Chu, H.

Author_Institution

Motorola Inc., Austin, TX, USA

fYear

1990

fDate

12-13 Jun 1990

Firstpage

90

Lastpage

96

Abstract

Laser planarization was applied to the second layer of metallization of a static memory part. Electrical evaluation by means of chain resistance, contact chain resistance, metal continuity/shorts, and leakage showed no deleterious effect for the laser planarized parts when compared to the control split, while SEM cross-sections showed fully planarized vias and large grain size for the metal. An electromigration study conducted to evaluate the effect of laser planarization on reliability indicated that an improvement in electromigration resistance, as compared to the control split, is attained when the metal is submitted to laser planarization

Keywords

aluminium; contact resistance; electromigration; laser beam applications; metallisation; scanning electron microscope examination of materials; Al; SEM cross-sections; SRAM wafers; chain resistance; contact chain resistance; electromigration resistance; excimer laser; fully planarized vias; grain size; laser planarization; leakage; metal continuity/shorts; metallization; reliability; second layer; semiconductor devices; static memory part; Aluminum; Contact resistance; Electric resistance; Electromigration; Grain size; Metallization; Optical control; Planarization; Semiconductor lasers; Size control;

fLanguage

English

Publisher

ieee

Conference_Titel

VLSI Multilevel Interconnection Conference, 1990. Proceedings., Seventh International IEEE

Conference_Location

Santa Clara, CA

Type

conf

DOI

10.1109/VMIC.1990.127849

Filename

127849